MRF9045LR1 Description
LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, mon--source amplifier applications in 28 volt base station...
MRF9045LR1 Key Features
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel
- Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc)
- Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc)
- On Characteristics