MRF9045LR1 Datasheet | Freescale Semiconductor

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, mon--source amplifier applications in 28 volt base station equipment. - Typical Two--Tone Performance at 945 MHz, 28 Volts Output Power - 45 Watts PEP Power Gain - 18.8 d B Efficiency - 42% IMD - --32 d Bc - Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power Features - Integrated ESD Protection - Designed for Maximum Gain and Insertion Phase Flatness - Excellent Thermal Stability - Characterized with Series Equivalent Large--Signal Impedance Parameters - Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9045 Rev. 11, 9/2008 MRF9045LR1 MRF9045LSR1 945 MHz, 45 W, 28 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 360B--05, STYLE 1 NI--360 Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics...