MRF9002NR2 Description
Freescale Semiconductor Technical Data Document Number: 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, mon - source amplifier applications in 26 volt base station equipment.
MRF9002NR2 Key Features
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- RoHS pliant
- In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
- CHANNEL BROADBAND RF POWER MOSFET
- 03 PLASTIC PFP
- Source Voltage Gate
- Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature Range Operating Junction Temperature Sym