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MRF9002NR2 - RF Power FET

General Description

33 pF Chip Capacitors (0805) 1.0 μF, 35 V Tantalum Capacitors, B Case, Kemet 8.2 pF Chip Capacitor (0805) 10 pF Chip Capacitors (0805) 2.7 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 12 nH Chip Inductors (0805) 0 W Chip Resistors (0805) 1.16 x 28.5 mm Microstrip 0.65 x 5.6 mm Microstrip 0

Key Features

  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • RoHS Compliant.
  • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MRF9002NR2 1000 MHz, 2 W, 26 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.