MRF9045NR1 Description
NOT REMENDED FOR NEW DESIGN NOT REMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, mon - source amplifier applications in 28 volt base station...
MRF9045NR1 Key Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Lead Boltdown Plastic Package Can Also Be Used As Surface
- 200_C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm
- CHANNEL
- 2 PLASTIC