Datasheet4U Logo Datasheet4U.com

MRF9045NR1 - RF Power Field Effect Transistor

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.
  • 200_C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRF9045N Rev. 12, 9/2008 MRF9045NR1 945 MHz, 45 W, 28 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9045MBR1 RF Power FET NXP
MRF9045MR1 RF Power FET NXP
MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology
MRF904 NPN SILICON RF TRANSISTOR ASI
MRF904 HIGH FREQUENCY TRANSISTOR Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9045LR1 RF Power FET
MRF9045LSR1 RF Power FET
MRF9002NR2 RF Power FET
MRF9030LR1 RF Power Field Effect Transistor
MRF9030MBR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.