MRF9045NR1
MRF9045NR1 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
NOT REMENDED FOR NEW DESIGN NOT REMENDED FOR NEW DESIGN
Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFET
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large
- signal, mon
- source amplifier applications in 28 volt base station equipment.
- Typical Performance at 945 MHz, 28 Volts Output Power
- 45 Watts PEP Power Gain
- 19 d B Efficiency
- 41% (Two Tones) IMD
- - 31 d Bc
- Integrated ESD Protection
- Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power
Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Dual
- Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
- 200_C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. Ro HS pliant.
- TO
- 270
- 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Document Number: MRF9045N Rev. 12,...
