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MRF9045NR1 Datasheet Rf Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.
  • 200_C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRF9045N Rev. 12, 9/2008 MRF9045NR1 945 MHz, 45 W, 28 V.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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MRF9045NR1 Distributor