MRFE6VP61K25GN Datasheet PDF (RF Power LDMOS Transistors)

MRFE6VP61K25GN - RF Power LDMOS Transistors

This page provides the datasheet information for the MRFE6VP61K25GN, a member of the MRFE6VP61K25N RF Power LDMOS Transistors family.

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization.
Device can be used Single--Ended or in a Push--Pull Configuration.
Qualified up to a Maximum of 50 VDD Operation.
Characterized from 30 to 50 V for Extended Power Range.
Suitable for Linear.

Datasheet Details

Part number	MRFE6VP61K25GN
Manufacturer	NXP
File Size	1.01 MB
Description	RF Power LDMOS Transistors
Datasheet	MRFE6VP61K25GN Datasheet
Additional preview pages of the MRFE6VP61K25GN datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type 87.5–108 (1,2) CW 230 (3) Pulse (100 sec, 20% Duty Cycle) Pout (W) 1309 CW 1250 Peak Gps (dB) 24.1 23.0 D (%) 77.6 72.3 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 230 (3) Pulse > 65:1 at all 11.

Published: May 5, 2020 |