MRFE6VP61K25GN
MRFE6VP61K25GN is RF Power LDMOS Transistors manufactured by NXP Semiconductors.
- Part of the MRFE6VP61K25N comparator family.
- Part of the MRFE6VP61K25N comparator family.
Features
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single--Ended or in a Push--Pull Configuration
- Qualified up to a Maximum of 50 VDD Operation
- Characterized from 30 to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Remended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
Gate A 3 Gate B 4
1 Drain A 2 Drain B
(Top View)
Note: Exposed backside of the package is the source terminal for the transistors.
Typical Applications
- Broadcast
- FM broadcast
- HF and VHF broadcast
- Industrial, Scientific, Medical (ISM)
- CO2 laser generation
- Plasma etching
- Particle accelerators (synchrotrons)
- MRI
- Industrial heating/welding
- Aerospace
- VHF omnidirectional range (VOR)
- Weather radar
- Mobile Radio
- HF and VHF munications
- PMR base stations
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data Freescale Semiconductor, Inc.
MRFE6VP61K25N MRFE6VP61K25GN 1
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C
Derate above 25C
Symbol VDSS VGS Tstg TC TJ PD
Value
- 0.5, +133
- 6.0,...
