Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle)
CW 1250 Peak 1250 CW 230 230 24.0 74.0 22.9 74.6 Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
1.8--600 MHz, 1250 W CW, 50 V WIDEBAND
RF POWER LDMOS TRANSISTORS Application Circuits (1) — Typical Performance Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 27 CW 1300 27 81 40 CW 1300 26 85 81.36 CW 1250 27 84 87.5--108 CW 1100 24 80 144--148 CW 1250 26 78 170--230 DVB--T 225 25 30 352 Pulse 1250 (200 sec, 20% Duty Cycle) 21.5 66 352 CW 1150 20.5 68 500 CW 1000 18 58 1. Contact your local Freescale sales office for additional information on specific circuit designs.
