MRFE6VP61K25HR6
MRFE6VP61K25HR6 is RF Power LDMOS Transistors manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
- Typical Performance: VDD = 50 Volts, IDQ = 100 m A
Signal Type
Pout (W) f (MHz)
Gps (d B)
D (%)
Pulse (100 sec, 20% Duty Cycle)
1250 Peak 1250 CW
230 230
24.0 74.0 22.9 74.6
Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
1.8--600 MHz, 1250 W CW, 50 V WIDEBAND
RF POWER LDMOS TRANSISTORS
Application Circuits (1)
- Typical Performance
Frequency (MHz)
Signal Type
Pout (W)
Gps (d B)
D (%)
87.5--108
144--148
170--230
DVB--T
Pulse
(200...
