MRFE6VP100HR5
MRFE6VP100HR5 is RF Power LDMOS Transistors manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts
Frequency (MHz)
Signal Type
Pout (W)
Gps (d B)
ηD IMD (%) (d Bc)
30--512 (1,3)
Two--Tone (100 k Hz spacing)
100 PEP
--30
512 (2)
27.2 70.0
- 512 (2)
Pulse (200 μsec, 20% 100 Peak Duty Cycle)
- Load Mismatch/Ruggedness
Frequency (MHz)
Signal Type
VSWR
Pout (W)
Test Voltage
Result
512 (2)
Pulse
>65:1
50 No...
