Datasheet Details
| Part number | MRFE6VP6300HR3 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 1.04 MB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRFE6VP6300HR3_FreescaleSemiconductor.pdf |
|
|
Overview: .DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 300 Peak 300 Avg. f (MHz) 230 130 Gps (dB) 26.5 25.0 ηD (%) 74.0 80.0 IRL (dB) --16 --15 MRFE6VP6300HR3 MRFE6VP6300HSR3 1.
| Part number | MRFE6VP6300HR3 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 1.04 MB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRFE6VP6300HR3_FreescaleSemiconductor.pdf |
|
|
|
| Part Number | Description |
|---|---|
| MRFE6VP6300HSR3 | RF Power Field Effect Transistors |
| MRFE6VP61K25HR6 | RF Power LDMOS Transistors |
| MRFE6VP100HR5 | RF Power LDMOS Transistors |
| MRFE6VP100HSR5 | RF Power LDMOS Transistors |
| MRFE6VP5600HR6 | RF Power Field Effect Transistors |
| MRFE6VP5600HSR6 | RF Power Field Effect Transistors |
| MRFE6P3300HR3 | RF Power Field Effect Transistor |
| MRFE6P3300HR5 | RF Power Field Effect Transistor |
| MRFE6S9045NR1 | RF Power FET |
| MRFE6S9060NR1 | RF Power FET |