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MRFE6VP6300HSR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: .DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 300 Peak 300 Avg. f (MHz) 230 130 Gps (dB) 26.5 25.0 ηD (%) 74.0 80.0 IRL (dB) --16 --15 MRFE6VP6300HR3 MRFE6VP6300HSR3 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Device can be used Single--Ended or in a Push--Pull Configuration.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Characterized from 30 V to 50 V for Extended Power Range.
  • Suitable for Linear.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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