Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. These devices are fabricated using Freescale’s enhanced
ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD IMD (%) (dBc) 30--512 (1,3) Two--Tone (100 kHz spacing) 100 PEP 19.0 30.0 --30 512 (2) CW 100 27.2 70.0 — 512 (2) Pulse (200 μsec, 20% 100 Peak Duty Cycle) 26.0 70.0 — Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pout (W) Test Voltage Result 512 (2) Pulse >65:1 130 50 No Device (100 μsec, 20% at all Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 512 (2) CW 126 (3 dB Overdrive) 1. Measured in 30--512 MHz broadband reference circuit. 2. Measured in 512 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the
indicated frequency range.