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MRFE6VP100HSR5 - RF Power LDMOS Transistors

Download the MRFE6VP100HSR5 datasheet PDF. This datasheet also covers the MRFE6VP100HR5 variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number Manufacturer B1, B2 Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite C1, C8 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C2, C9 120 pF Chip Capacitors ATC100B121JT500XT ATC C3 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC C4, C5 56 pF Chip Capacitors ATC

Key Features

  • Wide Operating Frequency Range.
  • Extremely Rugged.
  • Unmatched, Capable of Very Broadband Operation.
  • Integrated Stability Enhancements.
  • Low Thermal Resistance.
  • Integrated ESD Protection Circuitry.
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. Document Number: MRFE6VP100H Rev. 0, 5/2012 MRFE6VP100HR5 MRFE6VP100HSR5 1.8--2000 MHz, 100 W, 50 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFE6VP100HR5-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRFE6VP61K25GN RF Power LDMOS Transistors NXP
MRFE6VP61K25GSR5 RF Power LDMOS Transistors NXP
MRFE6VP61K25HR5 RF Power LDMOS Transistors NXP
MRFE6VP61K25HSR5 RF Power LDMOS Transistors NXP
MRFE6VP61K25N RF Power LDMOS Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6VP100HR5 RF Power LDMOS Transistors
MRFE6VP5600HR6 RF Power Field Effect Transistors
MRFE6VP5600HSR6 RF Power Field Effect Transistors
MRFE6VP61K25HR6 RF Power LDMOS Transistors
MRFE6VP6300HR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD IMD (%) (dBc) 30--512 (1,3) Two--Tone (100 kHz spacing) 100 PEP 19.0 30.0 --30 512 (2) CW 100 27.2 70.0 — 512 (2) Pulse (200 μsec, 20% 100 Peak Duty Cycle) 26.0 70.