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MRFE6VP100HSR5 Datasheet Rf Power Ldmos Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD IMD (%) (dBc) 30--512 (1,3) Two--Tone (100 kHz spacing) 100 PEP 19.0 30.0 --30 512 (2) CW 100 27.2 70.0 — 512 (2) Pulse (200 μsec, 20% 100 Peak Duty Cycle) 26.0 70.0 — Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pout (W) Test Voltage Result 512 (2) Pulse >65:1 130 50 No Device (100 μsec, 20% at all Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 512 (2) CW 126 (3 dB Overdrive) 1. Measured in 30--512 MHz broadband reference circuit. 2. Measured in 512 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the indicated frequency range.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Wide Operating Frequency Range.
  • Extremely Rugged.
  • Unmatched, Capable of Very Broadband Operation.
  • Integrated Stability Enhancements.
  • Low Thermal Resistance.
  • Integrated ESD Protection Circuitry.
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. Document Number: MRFE6VP100H Rev. 0, 5/2012 MRFE6VP100HR5 MRFE6VP100HSR5 1.8--2000 MHz, 100 W, 50 V.

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