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MRFE6VS25NR1 Datasheet Rf Power Ldmos Transistors

Manufacturer: NXP Semiconductors

Overview: NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) 1.8 to 30 (2,6) Two--Tone (10 kHz spacing) 25 PEP 30--512 (3,6) Two--Tone (200 kHz spacing) 25 PEP 512 (4) Pulse (100 sec, 20% Duty Cycle) 25 Peak 512 (4) CW 25 1030 (5) CW 25 Gps (dB) 25 17.1 25.4 25.5 22.5 D (%) 51 30.1 74.5 74.7 60 IMD (1) (dBc) --30 --32 — — — Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 30 (2) CW >65:1 at all Phase Angles 512 (3) CW 512 (4) 512 (4) Pulse (100 sec, 20% Duty Cycle) CW 1030 (5) CW Pin (W) 0.23 (3 dB Overdrive) 1.6 (3 dB Overdrive) 0.14 Peak (3 dB Overdrive) 0.14 (3 dB Overdrive 0.34 (3 dB Overdrive Test Voltage 50 Result No Device Degradation 1. Distortion products are referenced to one of two tones. See p. 13, 20. 2. Measured in 1.8--30 MHz broadband reference circuit. 3. Measured in 30--512 MHz broadband reference circuit. 4. Measured in 512 MHz narrowband test circuit. 5. Measured in 1030 MHz narrowband test circuit. 6. The values shown are the minimum measured performance numbers across the in- dicated frequency range.

Key Features

  • Wide operating frequency range.
  • Extreme ruggedness.
  • Unmatched, capable of very broadband operation.
  • Integrated stability enhancements.
  • Low thermal resistance.
  • Extended ESD protection circuit  2012, 2019 NXP B. V. RF Device Data NXP Semiconductors Document Number: MRFE6VS25N Rev. 2, 03/2019 MRFE6VS25NR1 MRFE6VS25GNR1 1.8--2000 MHz, 25 W, 50 V.

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