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MRFE6VS25GNR1 - RF Power LDMOS Transistors

Download the MRFE6VS25GNR1 datasheet PDF. This datasheet also covers the MRFE6VS25NR1 variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Wide operating frequency range.
  • Extreme ruggedness.
  • Unmatched, capable of very broadband operation.
  • Integrated stability enhancements.
  • Low thermal resistance.
  • Extended ESD protection circuit  2012, 2019 NXP B. V. RF Device Data NXP Semiconductors Document Number: MRFE6VS25N Rev. 2, 03/2019 MRFE6VS25NR1 MRFE6VS25GNR1 1.8--2000 MHz, 25 W, 50 V.

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Note: The manufacturer provides a single datasheet file (MRFE6VS25NR1-NXP.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
MRFE6VS25NR1 RF Power LDMOS Transistors
MRFE6VP61K25GN RF Power LDMOS Transistors
MRFE6VP61K25GSR5 RF Power LDMOS Transistors
MRFE6VP61K25HR5 RF Power LDMOS Transistors
MRFE6VP61K25HSR5 RF Power LDMOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) 1.8 to 30 (2,6) Two--Tone (10 kHz spacing) 25 PEP 30--512 (3,6) Two--Tone (200 kHz spacing) 25 PEP 512 (4) Pulse (100 sec, 20% Duty Cycle) 25 Peak 512 (4) CW 25 1030 (5) CW 25 Gps (dB) 25 17.1 25.4 25.5 22.5 D (%) 51 30.1 74.5 74.