MRFE6VS25GNR1 Overview
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered....
MRFE6VS25GNR1 Key Features
- Wide operating frequency range
- Extreme ruggedness
- Unmatched, capable of very broadband operation
- Integrated stability enhancements
- Low thermal resistance
- Extended ESD protection circuit