MRFE6VS25NR1
MRFE6VS25NR1 is RF Power LDMOS Transistors manufactured by NXP Semiconductors.
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts
Frequency (MHz)
Signal Type
Pout (W)
1.8 to 30 (2,6)
Two--Tone (10 k Hz spacing)
25 PEP
30--512 (3,6)
Two--Tone (200 k Hz spacing)
25 PEP
512 (4)
Pulse (100 sec, 20% Duty Cycle)
25 Peak
512 (4)
1030 (5)
Gps (d B) 25
25.5 22.5
D (%) 51
74.7 60
IMD (1) (d Bc) --30
--32
- -
- Load Mismatch/Ruggedness
Frequency
(MHz)
Signal...
