Part MRFX1K80GN
Description RF Power LDMOS Transistors
Category Transistor
Manufacturer NXP Semiconductors
Size 1.61 MB
NXP Semiconductors

MRFX1K80GN Overview

Key Features

  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single--ended or in a push--pull configuration
  • Qualified up to a maximum of 65 VDD operation
  • Characterized from 30 to 65 V for extended power range
  • Lower - High breakdown voltage for enhanced reliability
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
  • Included in NXP product longevity program with assured supply for a minimum of 15 years after launch