* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Qualified up to a maximum of 65 VDD operation
* Characterized from 30 to 65 V for extended power range
* Lower thermal resist
MRFX1K80GN Datasheet (1.61 MB)
MRFX1K80GN
1.61 MB
Rf power ldmos transistors.
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high r.
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