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MRFX1K80GN Datasheet Rf Power Ldmos Transistors

Manufacturer: NXP Semiconductors

Overview: NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz. Typical Performance Frequency (MHz) Signal Type 87.5–108 (1,2) 230 (3) CW Pulse (100 sec, 20% Duty Cycle) VDD (V) Pout (W) Gps (dB) 60 1670 CW 23.8 65 1800 Peak 24.4 D (%) 83.5 75.7 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 230 (3) Pulse > 65:1 at all 14 W Peak 65 No Device (100 sec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) 1. Measured in 87.5–108 MHz broadband reference circuit (page 5). 2. The values shown are the center band performance numbers across the indicated frequency range. 3. Measured in 230 MHz narrowband production test fixture (page 11).

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Unmatched input and output allowing wide frequency range utilization.
  • Device can be used single--ended or in a push--pull configuration.
  • Qualified up to a maximum of 65 VDD operation.
  • Characterized from 30 to 65 V for extended power range.
  • Lower thermal resistance package.
  • High breakdown voltage for enhanced reliability.
  • Suitable for linear.

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