MRFX1K80N Description
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz. Measured in 87.5 108 MHz broadband reference circuit (page 5).
MRFX1K80N Key Features
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single--ended or in a push--pull configuration
- Qualified up to a maximum of 65 VDD operation
- Characterized from 30 to 65 V for extended power range
- Lower thermal resistance package
- High breakdown voltage for enhanced reliability
- Suitable for linear application with appropriate biasing
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch