MRFX1K80N
MRFX1K80N is RF Power LDMOS Transistors manufactured by NXP Semiconductors.
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.
Typical Performance
Frequency (MHz)
Signal Type
87.5- 108 (1,2) 230 (3)
Pulse (100 sec, 20% Duty Cycle)
VDD (V)
Pout (W)
Gps (d B)
60 1670 CW 23.8
65 1800 Peak 24.4
D (%) 83.5 75.7
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W)
Voltage
Result
230 (3)
Pulse
> 65:1 at all 14 W Peak 65
No Device
(100 sec, 20% Phase Angles (3 d...
