Datasheet Summary
NXP Semiconductors Technical Data
Document Number: MRF101AN Rev. 1, 05/2019
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
MRF101AN MRF101BN
These devices are designed for use in HF and VHF munications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.
Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
Pout
Gps
D
(W)
(dB)
(%)
13.56 (1) 27 (2)
40.68 (3) 50 (4)
81.36 (5) 87.5- 108 (6,7) 136- 174 (7,8)
230 (9)
CW CW CW CW CW CW CW Pulse (100 sec, 20% Duty Cycle)
130 CW 125 CW 120 CW 119 CW 130 CW 115 CW 104 CW 115...
