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MRF101BN - RF Power LDMOS Transistors

Download the MRF101BN datasheet PDF. This datasheet also covers the MRF101AN variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration.
  • Characterized from 30 to 50 V.
  • Suitable for linear.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF101AN-NXP.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
MRF101AN RF Power LDMOS Transistors
MRF13750H RF Power LDMOS Transistors
MRF13750HS RF Power LDMOS Transistors
MRF18060BLR3 RF Power Field Effect Transistor
MRF18060BLSR3 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NXP Semiconductors Technical Data Document Number: MRF101AN Rev. 1, 05/2019 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 87.5–108 (6,7) 136–174 (7,8) 230 (9) CW CW CW CW CW CW CW Pulse (100 sec, 20% Duty Cycle) 130 CW 125 CW 120 CW 119 CW 130 CW 115 CW 104 CW 115 Peak 27.1 24.9 23.8 22.8 23.2 20.6 21.2 21.1 79.6 79.6 81.5 82.1 80.8 76.8 76.5 76.7 1.