MRF101BN Description
NXP Semiconductors Technical Data Document Number: 1, 05/2019 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF munications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.
MRF101BN Key Features
- Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration
- Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch