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NX2020N2 Key Features

  • Trench MOSFET technology
  • Very fast switching
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated 100 % solderable side pads for optical solder inspection

Related NXP Semiconductors Datasheets

Part Number Description
NX2020P1 single P-channel Trench MOSFET
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NX20P0408 USB D+/D- protection
NX20P0477 USB Type-C CC smart protection
NX20P3483UK high voltage sink/source combo switch

NX2020N2 Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

NX2020N2 Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portables