Download NX2020P1 Datasheet PDF
NX2020P1 page 2
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NX2020P1 Key Features

  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated 100 % solderable side pads for optical solder inspection

NX2020P1 Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

NX2020P1 Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portable devices