PBRP123YT ma equivalent, pnp 800 ma.
I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I R.
I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads
1.4 Qu.
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800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT.
1.2 Features
I 800 mA repetitive p.
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