Datasheet Details
| Part number | PBSS303PD |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 175.97 KB |
| Description | 3A PNP low VCEsat (BISS) transistor |
| Datasheet |
 PBSS303PD Datasheet
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General Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS303ND.
Key Features
- I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.
