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PBSS303ND - 3A NPN transistor

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS303PD.

Key Features

  • I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS303ND 60 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 — 14 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PD. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I High-voltage DC-to-DC conversion I High-voltage MOSFET gate driving I High-voltage motor control I High-voltage power switches (e.g.