PBSS303NX Datasheet | NXP Semiconductors

.. 30 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 01 - 23 August 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP plement: PBSS303PX. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I DC-to-DC conversion MOSFET gate...