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PBSS303PD Datasheet 3a PNP Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com PBSS303PD 60 V, 3 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 May 2006 Product data sheet 1. Product profile 1.

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS303ND.

1.2

Key Features

  • I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

PBSS303PD Distributor

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