Datasheet4U Logo Datasheet4U.com

PBSS303PD - 3A PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS303ND.

Key Features

  • I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS303PX PNP Transistor nexperia
PBSS303PZ PNP Transistor nexperia
PBSS303ND 3A NPN transistor nexperia
PBSS303NZ 5.5A NPN transistor nexperia
PBSS301NX 5.3A NPN transistor nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PBSS303NX 5.1A NPN transistor
PBSS301ND 4A NPN transistor
PBSS301PD PNP Transistor
PBSS302ND 40V NPN transistor
PBSS302NZ 5.8A NPN transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PBSS303PD 60 V, 3 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 May 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303ND. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g.