* I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I
PBSS305ND Datasheet (145.65 KB)
PBSS305ND
145.65 KB
3a npn transistor.
PBSS305ND 100 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 10 April 2006 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 .
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