Datasheet Details
| Part number | PBSS305NZ |
|---|---|
| Manufacturer | Nexperia |
| File Size | 171.16 KB |
| Description | 5.1A NPN transistor |
| Datasheet |
 PBSS305NZ Datasheet
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General Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS305PZ.
Key Features
- Low collector-emitter saturation voltage VCEsat.
- High collector current capability IC and ICM.
- High collector current gain (hFE) at high IC.
- High efficiency due to less heat generation.
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.
