PBSS305ND Datasheet | NXP Semiconductors

100 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 - 10 April 2006 .. Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP plement: PBSS305PD. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET...