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PBSS305PD - PNP Transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS305ND.

Key Features

  • I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription for PBSS305PD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PBSS305PD. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PBSS305PD 100 V, 2 A PNP low VCEsat (BISS) transistor Rev. 01 — 30 May 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsa...

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uct data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305ND. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control Hi

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