* I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I
PBSS305PD Datasheet (173.99 KB)
PBSS305PD
173.99 KB
Pnp transistor.
www.DataSheet4U.com PBSS305PD 100 V, 2 A PNP low VCEsat (BISS) transistor Rev. 01 30 May 2006 Product data sheet 1. Product profile 1.1 Gen.
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