* s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s
PBSS3540E Datasheet (135.37 KB)
PBSS3540E
135.37 KB
Pnp low vcesat (biss) transistor.
www.DataSheet4U.com PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor Rev. 01 3 May 2005 Product data sheet 1. Product profile 1.1 Ge.
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