PBSS3540M Description
Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 2003 Aug 12 2 Philips Semiconductors 40 V, 0.5 A PNP low VCEsat (BISS) transistor Product specification PBSS3540M LIMITING VALUES In accordance with the Rating System (IEC 60134).
PBSS3540M Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board requirements