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PBSS3540E - PNP low VCEsat (BISS) transistor

Description

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

NPN complement: PBSS2540E.

Features

  • s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSS3540E
Manufacturer NXP
File Size 135.37 KB
Description PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS3540E Datasheet
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www.DataSheet4U.com PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor Rev. 01 — 3 May 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.
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