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PBSS4440D - NPN transistor

Datasheet Summary

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package.

PNP complement: PBSS5440D.

Features

  • Ultra low collector-emitter saturation voltage VCEsat.
  • 4 A continuous collector current capability IC (DC).
  • Up to 15 A peak current.
  • Very low collector-emitter saturation resistance.
  • High efficiency due to less heat generation 1.3.

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Datasheet Details

Part number PBSS4440D
Manufacturer NXP
File Size 166.19 KB
Description NPN transistor
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PBSS4440D 40 V NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D. 1.2 Features „ Ultra low collector-emitter saturation voltage VCEsat „ 4 A continuous collector current capability IC (DC) „ Up to 15 A peak current „ Very low collector-emitter saturation resistance „ High efficiency due to less heat generation 1.3 Applications „ Power management functions „ Charging circuits „ DC-to-DC conversion „ MOSFET gate driving „ Power switches (e.g. motors, fans) „ Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1.
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