PBSS5230T Datasheet - NXP

PNP Transistor

PBSS5230T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications.

PBSS5230T General Description

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE(1) 3K * 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE .

PBSS5230T Datasheet (197.30 KB)

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PBSS5230T

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NXP ↗

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197.30 KB

Description:

Pnp transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Product speciﬁcation 2003 De.

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PBSS5230T PNP Transistor NXP

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PBSS5230T Features

PBSS5230T General Description

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