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PBSS5230T Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • Higher efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative to MOSFETs in specific

Other PBSS5230T Datasheets

Manufacturer Part Number Description
nexperia Logo Nexperia PBSS5230PAP 2A PNP/PNP low VCEsat (BISS) transistor
nexperia Logo Nexperia PBSS5230QA PNP Transistor

PBSS5230T Description

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. MARKING CODE(1) 3K 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.