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PBSS5250T Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • Higher efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative to MOSFETs in specific

Other PBSS5250T Datasheets

Manufacturer Part Number Description
nexperia Logo Nexperia PBSS5250TH PNP transistor
nexperia Logo Nexperia PBSS5250X PNP transistor
nexperia Logo Nexperia PBSS5250X-Q 50V 2A PNP low VCEsat transistor

PBSS5250T Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −2 −3 150 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5250T Note.