PBSS5250T Datasheet - NXP

PNP low VCEsat (BISS) transistor

PBSS5250T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications.

PBSS5250T General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. *50 *2 *3 150 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER .

PBSS5250T Datasheet (75.70 KB)

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PBSS5250T

Manufacturer:

NXP ↗

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75.70 KB

Description:

Pnp low vcesat (biss) transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat (BISS) transistor Product speciﬁcation 2003 Oc.

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PBSS5250T PNP low VCEsat BISS transistor NXP

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PBSS5250T Features

PBSS5250T General Description

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