PBSS5250T Datasheet PNP low VCEsat (BISS) transistor

Manufacturer: NXP Semiconductors

PBSS5250T pnp low vcesat (biss) transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PBSS5250T
Manufacturer	NXP Semiconductors
File Size	75.70 KB
Description	PNP low VCEsat (BISS) transistor
Datasheet	PBSS5250T Datasheet

General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

−50 −2 −3 150 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.

MARKING TYPE NUMBER PBSS5250T Note 1.

Overview

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat (BISS) transistor Product speciﬁcation 2003 Oct 09 Philips Semiconductors Product speciﬁcation 50 V, 2 A PNP low VCEsat.

Key Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability: IC and ICM.
Higher efficiency leading to less heat generation.
Reduced printed-circuit board requirements.
Cost effective alternative to MOSFETs in specific.

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