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PBSS5250TH - PNP transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • High collector current gain (hFE) at high IC.
  • Higher efficiency leading to less heat genereation.
  • High temperature.

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PBSS5250TH 50 V, 2 A PNP low VCEsat (BISS) transistor 9 August 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat genereation • High temperature applications up to 175 °C • AEC-Q101 qualified 3. Applications • Power management • DC-to-DC conversion • Supply line switches • Battery charger switches • Peripheral drivers • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver 4. Quick reference data Table 1.