PBSS5250TH Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- Higher efficiency leading to less heat genereation
- High temperature
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PBSS5250T | PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
PBSS5250X | PNP Transistor |