• Part: PBSS5330PAS
  • Description: 3A PNP low VCEsat (BISS) transistor
  • Manufacturer: NXP Semiconductors
  • Size: 246.38 KB
Download PBSS5330PAS Datasheet PDF
NXP Semiconductors
PBSS5330PAS
PBSS5330PAS is 3A PNP low VCEsat (BISS) transistor manufactured by NXP Semiconductors.
DF N2 020 D-3 11 September 2014 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN plement: PBSS4330PAS 2. Features and benefits - - - - - - - - - - Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit...