Datasheet Summary
30 V, 3 A PNP low VCEsat (BISS) transistor
7 April 2015
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN plement: PBSS4330PA.
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Exposed heat sink for excellent thermal and electrical conductivity
- Leadless small SMD plastic package with medium power capability
3. Applications
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