Datasheet4U Logo Datasheet4U.com

PBSS5330X - PNP transistor

General Description

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package.

MARKING TYPE NUMBER PBSS5330X Note 1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

Key Features

  • SOT89 (SC-62) package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 28 2004 Nov 03 Philips Semiconductors Product specification 30 V, 3 A PNP low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors).