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PBSS5330PA Datasheet 3a PNP Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: HUSON3 PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1.

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4330PA.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • Leadless small SMD plastic package with medium power capability 3.

PBSS5330PA Distributor

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