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PBSS5330PA - 3A PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4330PA.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • Leadless small SMD plastic package with medium power capability 3.

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HUSON3 PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors • Exposed heat sink for excellent thermal and electrical conductivity • Leadless small SMD plastic package with medium power capability 3. Applications • Loadswitch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g.