* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS9110D Datasheet (167.28 KB)
PBSS9110D
167.28 KB
Pnp transistor.
PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 22 November 2009 Product data sheet 1. Product profile 1.1 General descript.
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