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PBSS9110D Datasheet PNP transistor

Manufacturer: NXP Semiconductors

Overview: PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.

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General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS8110D.

1.2

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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