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NXP Semiconductors Electronic Components Datasheet

PBSS9110T Datasheet

PNP low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBSS9110T
100 V, 1 A
PNP low VCEsat (BISS) transistor
Product specification
Supersedes data of 2004 May 06
2004 May 13


NXP Semiconductors Electronic Components Datasheet

PBSS9110T Datasheet

PNP low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
100 V, 1 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS9110T
FEATURES
SOT23 package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency leading to less heat generation
APPLICATIONS
Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
DC-to-DC conversion
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
RCEsat
equivalent on-resistance
MAX. UNIT
100
1
3
V
A
A
320 m
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
handbook, halfpage
3
3
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS8110T.
MARKING
TYPE NUMBER
PBSS9110T
MARKING CODE(1)
*U7
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
1
Top view
1
2
MAM256
2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS9110T
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 May 13
2


Part Number PBSS9110T
Description PNP low VCEsat (BISS) transistor
Maker NXP
Total Page 12 Pages
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