PBSS9110T Datasheet - NXP

PNP low VCEsat (BISS) transistor

PBSS9110T Features

* SOT23 package

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation APPLICATIONS

* Major application segments

* Automotive 42 V power

* Telecom in

PBSS9110T General Description

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS8110T. MARKING TYPE NUMBER PBSS9110T Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS9110T PACKAGE NAME * DESCRIPTION plastic surface mounted packag.

PBSS9110T Datasheet (132.05 KB)

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Datasheet Details

Part number:

PBSS9110T

Manufacturer:

NXP ↗

File Size:

132.05 KB

Description:

Pnp low vcesat (biss) transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product speciﬁc.

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PBSS9110T PNP low VCEsat BISS transistor NXP

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PBSS9110T Features

PBSS9110T General Description

Datasheet Details

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