PBYR235CT Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - low profile surface mounting package PBYR245CT series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 2 A VF ≤ 0.45V SOT223 DESCRIPTION a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, mon cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR245CT series is supplied in the surface mounting SOT223 package. PINNING PIN 1 2 3 tab anode 1 cathode anode 2 cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR2 Tsp ≤ 74 ˚C square wave; δ = 0.5; Tsp ≤ 119 ˚C square wave; δ = 0.5; Tsp ≤ 119 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 40 MIN. MAX. 40CT 40 40 40 2 2 6 6.6 1 150 150 45CT 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg THERMAL RESISTANCES SYMBOL PARAMETER Rth j-a Thermal resistance junction to ambient CONDITIONS pcb mounted, minimum footprint pcb mounted, pad area as in fig:1 MIN. TYP. MAX. UNIT 156 70 K/W K/W July 1998 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 1 A; Tj = 125˚C IF = 2 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C PBYR245CT series MIN. -...