Download PDTC124ES Datasheet PDF
NXP Semiconductors
PDTC124ES

Key Features

  • Built-in bias resistors R1 and R2 (typ. 22 kΩ each)
  • Simplification of circuit design
  • Especially suitable for space reduction in interface and driver circuits
  • 60 15.4 0.8 MIN
  • 28.6 1.2 kΩ UNIT V mA mA mW