PDTC124ES Datasheet (PDF) Download
NXP Semiconductors
PDTC124ES

Key Features

  • Built-in bias resistors R1 and R2 (typ. 22 kΩ each)
  • Simplification of circuit design
  • Especially suitable for space reduction in interface and driver circuits
  • 60 15.4 0.8 MIN
  • 65 - -65 CONDITIONS open emitter open base open collector
  • MIN. PDTC124ES MAX. 50 50 10 +40 -10 100 100 500 +150 150 +150 V V V V V UNIT mA mA mW °C °C °C VALUE 250 UNIT K/W TYP