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PDTD114EQA Datasheet NPN resistor-equipped transistors

Manufacturer: NXP Semiconductors

Download the PDTD114EQA datasheet PDF. This datasheet also includes the PDTD113EQA variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (PDTD113EQA-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Table 1.

Product overview Type number R1 PDTD113EQA 1 k PDTD123EQA 2.2 k PDTD143EQA 4.7 k PDTD114EQA 10 k R2 1 k 2.2 k 4.7 k 10 k Package NXP DFN1010D-3 (SOT1215) PNP complement PDTB113EQA PDTB123EQA PDTB143EQA PDTB114EQA 1.2

Overview

DFN1010D-3 PDTD113/123/143/114EQA series 50 V, 500 mA NPN resistor-equipped transistors Rev.

1 — 4 February 2016 Product data sheet 1.

Product profile 1.

Key Features

  • 500 mA output current capability.
  • Built-in bias resistors.
  •  10% resistor ratio tolerance.
  • Simplifies circuit design.
  • Reduces component count.
  • Reduced pick and place costs.
  • Low package height of 0.37 mm.
  • Suitable for Automatic Optical Inspection (AOI) of solder joint.
  • AEC-Q101 qualified 1.3.

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