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PESD3V3L5UV - Low capacitance 5-fold ESD protection diode arrays

This page provides the datasheet information for the PESD3V3L5UV, a member of the PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays family.

Description

DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD).

Features

  • Uni-directional ESD protection of up to five lines.
  • Bi-directional ESD protection of up to four lines.
  • Low diode capacitance.
  • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs.
  • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A.
  • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V.
  • ESD protection > 20 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.

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Datasheet preview – PESD3V3L5UV

Datasheet Details

Part number PESD3V3L5UV
Manufacturer NXP Semiconductors
File Size 120.52 KB
Description Low capacitance 5-fold ESD protection diode arrays
Datasheet download datasheet PESD3V3L5UV Datasheet
Additional preview pages of the PESD3V3L5UV datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 www.DataSheet4U.com PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package FEATURES • Uni-directional ESD protection of up to five lines • Bi-directional ESD protection of up to four lines • Low diode capacitance • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V • ESD protection > 20 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.
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