PESD3V3L5UY - Low capacitance 5-fold ESD protection diode arrays

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NXP

PESD3V3L5UY Low capacitance 5-fold ESD protection diode arrays by NXP - Datasheet Preview — Datasheet preview – PESD3V3L5UY

Datasheet Details

Part number	PESD3V3L5UY
Manufacturer	NXP
File Size	122.64 KB
Description	Low capacitance 5-fold ESD protection diode arrays
Datasheet	PESD3V3L5UY Datasheet
Note	This datasheet PDF includes multiple part numbers: PESD3V3L5UY, PESD5V0L5UY. Please refer to the document for exact specifications by model.
Additional preview pages of the PESD3V3L5UY datasheet.

Product details

Description

common anode cathode 2 cathode 3 cathode 4 cathode 5 DESCRIPTION Low capacitance 5-fold ESD protection array in the very small SOT363 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD).MARKING TYPE NUMBER PESD3V3L5UY PESD5V0L5UY Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. DESCRIP

Features

Uni-directional ESD protection of up to five lines.
Bi-directional ESD protection of up to four lines.
Low diode capacitance.
Maximum peak pulse power: Ppp = 25 W at tp = 8/20 µs.
Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A.
Ultra low leakage current: IRM = 8 nA at VRWM = 5 V.
ESD protection > 20 kV.
IEC 61000-4-2; level 4 (ESD).
IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.

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Published: Jun 20, 2007 |