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PESD3V3L5UV Datasheet Low capacitance 5-fold ESD protection diode arrays

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 www.DataSheet4U.com PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product.

Download the PESD3V3L5UV datasheet PDF. This datasheet also includes the PESD5V0L5UV variant, as both parts are published together in a single manufacturer document.

General Description

common anode cathode 2 cathode 3 cathode 4 cathode 5 DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD).

MARKING TYPE NUMBER PESD3V3L5UV PESD5V0L5UV Note 1.

* = p: Made in Hong Kong.

Key Features

  • Uni-directional ESD protection of up to five lines.
  • Bi-directional ESD protection of up to four lines.
  • Low diode capacitance.
  • Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs.
  • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A.
  • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V.
  • ESD protection > 20 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.