PESD3V3V4UW Datasheet | NXP Semiconductors

description Very low capacitance quadruple Electro Static Discharge (ESD) protection diode arrays in ultra small SOT665 plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features s ESD protection of up to four lines s Very low diode capacitance s Low clamping voltage s Ultra low leakage current: IRM = 3 n A s ESD protection up to 12 k V s IEC 61000-4-2; level 4 (ESD) 1.3 Applications s puters and peripherals s Audio and video equipment s Cellular handsets and accessories s munication systems s Portable electronics s Subscriber Identity Module (SIM) card protection .. 1.4 Quick reference data Table 1: Symbol VRWM Quick reference data Parameter reverse stand-off voltage PESD3V3V4UW PESD5V0V4UW Cd diode capacitance f = 1 MHz; see Figure 5; VR = 0 V 15 12 18 15 p F p F 3.3 5.0 V V Conditions Min Typ Max Unit PESD3V3V4UW PESD5V0V4UW Philips Semiconductors PESDx V4UW series Very low capacitance quadruple ESD protection diode arrays 2. Pinning information Table 2: Pin 1 2 3 4 5 Pinning Description cathode 1 mon anode cathode 2 cathode 3 cathode 4 1 2 3 5 4 1 3 2 4 5 sym050 Simplified outline Symbol 3. Ordering information Table 3: Ordering information Package Name PESD3V3V4UW PESD5V0V4UW Description plastic surface mounted package; 5 leads Version SOT665 Type number .. 4. Marking Table 4: Marking codes Marking code W1 W2 Type number PESD3V3V4UW PESD5V0V4UW 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3V4UW PESD5V0V4UW IPP peak pulse current PESD3V3V4UW PESD5V0V4UW 8/20 µs [1] [2] Conditions 8/20 µs [1] [2] Min - Max 16 16 1.5 1.5 Unit W W A A 9397 750 14481 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 - 22 April 2005 2 of 11 Philips Semiconductors PESDx V4UW series Very low capacitance quadruple ESD protection diode arrays Table 5:...