• Part: PESD3V3L2BT
  • Manufacturer: EVVO
  • Size: 347.40 KB
Download PESD3V3L2BT Datasheet PDF
PESD3V3L2BT datasheet preview
PESD3V3L2BT page 2
Page 2
PESD3V3L2BT page 3
Page 3

PESD3V3L2BT Key Features

  • 400W peak pulse power (tp =8/20μs)
  • Bidirectional configurations
  • Solid-state silicon-avalanche technology
  • Low clamping voltage
  • Low leakage current
  • IEC 61000-4-2 ±30kV contact ±30kV air
  • IEC 61000-4-4 (EFT) 40A(5/50ns)
  • IEC 61000-4-5 (Lightning) 24A(8/20μs)

Other PESD3V3L2BT Datasheets

Manufacturer Part Number Description
NXP Logo NXP Semiconductors PESD3V3L2BT Low capacitance double bidirectional ESD protection diodes
UMW
UMW		 PESD3V3L2BT ESD protection diodes
nexperia Logo Nexperia PESD3V3L2BT Low capacitance double bidirectional ESD protection diode
Kexin Logo Kexin Semiconductor PESD3V3L2BT ESD Protection Diodes
NXP Logo NXP Semiconductors PESD3V3L2UM Low capacitance double ESD protection diode

View all PESD3V3L2BT datasheets →

PESD3V3L2BT Description

Pulse Time 10 400w 8/20µs aveform 1 0.1 0.01 td Pulse Duration - µs Percent of Rated Power for Ipp Figure.