PESD3V3L2BT Datasheet | NXP Semiconductors

description Low capacitance double bidirectional Electro Static Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients. 1.2 Features I ESD protection of two lines I Max. peak pulse power: PPP = 350 W I Low clamping voltage: VCL = 26 V I Small SMD plastic package I Ultra low leakage current: IRM < 90 n A I ESD protection up to 23 k V I IEC 61000-4-2, level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 15 A 1.3 Applications I puters and peripherals I Audio and video equipment I Cellular handsets and accessories I munication systems I Portable electronics I Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Symbol VRWM Cd Quick reference data Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Conditions VR = 0 V; f = 1 MHz Min Typ Max Unit - - 3.3 V - - 5.0 V - - 12 V - - 15 V - - 24 V - 101 - p F - 75 - p F - 19 - p F - 16 - p F - 11 - p F NXP Semiconductors PESDx L2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 2. Pinning information Table 2. Pin 1 2 3 Pinning Description cathode 1 cathode 2 double cathode Simplified outline Symbol 3 12 1...