Download PESD3V3L2BT Datasheet PDF
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PESD3V3L2BT page 2
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PESD3V3L2BT page 3
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PESD3V3L2BT Key Features

  • ESD protection of two lines
  • Max. peak pulse power: PPP=350W
  • Low clamping voltage: VCL=26V
  • Small SMD plastic package
  • Ultra low leakage current: IRM<90nA
  • ESD protection up to 23 kV
  • IEC61000-4-2, level4 (ESD)
  • IEC61000-4-5 (surge); IPP=15A

Other PESD3V3L2BT Datasheets

Manufacturer Part Number Description
NXP Logo NXP Semiconductors PESD3V3L2BT Low capacitance double bidirectional ESD protection diodes
EVVOSEMI Logo EVVO PESD3V3L2BT ESD protection diodes
UMW
UMW		 PESD3V3L2BT ESD protection diodes
nexperia Logo Nexperia PESD3V3L2BT Low capacitance double bidirectional ESD protection diode
NXP Logo NXP Semiconductors PESD3V3L2UM Low capacitance double ESD protection diode

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PESD3V3L2BT Description

SMD Type TransDisiotodress ESD Protection Diodes PESDxL2BT series.